APTGT600A60G APTGT600A60G ? rev 2 december, 2007 www.microsemi.com 1-5 absolute maximum ratings * specification of igbt device but output current must be limited to 500a to not exceed a delta of temperature greater than 100c for the connectors. these devices are sens itive to electrostatic discharge. prope r handling procedures should be follow ed. see application note apt0502 on www.microsemi.com q2 0/vbus q1 vbus out g1 g2 e2 e1 out vbus e1 g1 0/vbus g2 e2 symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 700 * i c continuous collector current t c = 80c 600 * i cm pulsed collector current t c = 25c 800 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 2300 w rbsoa reverse bias safe operating area t j = 150c 1200a @ 550v v ces = 600v i c = 600a* @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? low profile ? rohs compliant phase leg trench + field stop igbt ? power module www..net
APTGT600A60G APTGT600A60G ? rev 2 december, 2007 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 750 a t j = 25c 1.4 1.8 v ce(sat) collector emitter saturation voltage v ge =15v i c = 600a t j = 150c 1.5 v v ge(th) gate threshold voltage v ge = v ce , i c = 2ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 800 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 49 c oes output capacitance 3.1 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 1.5 nf t d(on) turn-on delay time 130 t r rise time 55 t d(off) turn-off delay time 250 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 600a r g = 1 60 ns t d(on) turn-on delay time 145 t r rise time 60 t d(off) turn-off delay time 320 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 600a r g = 1 80 ns t j = 25c 3 e on turn on energy t j = 150c 5.5 mj t j = 25c 17 e off turn off energy v ge = 15v v bus = 300v i c = 600a r g = 1 t j = 150c 21 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 350 i rm maximum reverse leakage current v r =600v t j = 150c 550 a i f dc forward current tc = 80c 600 a t j = 25c 1.5 1.9 v f diode forward voltage i f = 600a v ge = 0v t j = 150c 1.4 v t j = 25c 120 t rr reverse recovery time t j = 150c 210 ns t j = 25c 27 q rr reverse recovery charge t j = 150c 57 c t j = 25c 6.9 e r reverse recovery energy i f = 600a v r = 300v di/dt =5000a/s t j = 150c 14.1 mj
APTGT600A60G APTGT600A60G ? rev 2 december, 2007 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.065 r thjc junction to case thermal resistance diode 0.11 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting in structions for sp6 power modules on www.microsemi.com
APTGT600A60G APTGT600A60G ? rev 2 december, 2007 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 200 400 600 800 1000 1200 00.511.522.5 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 200 400 600 800 1000 1200 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 200 400 600 800 1000 1200 567891011 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 5 10 15 20 25 30 35 40 0 200 400 600 800 1000 1200 i c (a) e (mj) v ce = 300v v ge = 15v r g = 1 ? t j = 150c eon eon eoff er 0 10 20 30 40 0123456 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 600a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =1 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt
APTGT600A60G APTGT600A60G ? rev 2 december, 2007 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =125c t j =150c 0 200 400 600 800 1000 1200 00.40.81.21.62 v f (v) i f (a) hard switching zcs zvs 0 20 40 60 80 100 120 0 200 400 600 800 1000 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =1 ? t j =150c t c =85c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s pate nts 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
|
